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Semiconductors Transistors

MJW3281AG

MJW3281AG
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[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 5.30$ 5.30$
5 - 9 5.04$ 5.04$
10 - 24 4.77$ 4.77$
25 - 49 4.51$ 4.51$
50 - 55 4.40$ 4.40$
Quantity U.P
1 - 4 5.30$ 5.30$
5 - 9 5.04$ 5.04$
10 - 24 4.77$ 4.77$
25 - 49 4.51$ 4.51$
50 - 55 4.40$ 4.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 55
Set of 1

MJW3281AG. Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 13
MJL3281A

MJL3281A

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar P...
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
12.03$ VAT incl.
(12.03$ excl. VAT)
12.03$
Quantity in stock : 51
NJW3281

NJW3281

C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function:...
NJW3281
C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no
NJW3281
C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no
Set of 1
8.04$ VAT incl.
(8.04$ excl. VAT)
8.04$

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Quantity in stock : 26
NJW1302

NJW1302

C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: ...
NJW1302
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NJW1302
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8.04$ VAT incl.
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Quantity in stock : 927
SMICA-SOT93

SMICA-SOT93

Various: heat conducting and electrical insulating sheet. Dimensions: 20x24x0.3mm. Operating tempera...
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SMICA-SOT93
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Quantity in stock : 26
2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
2SC3281
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2SC3281
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2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$
Quantity in stock : 152
STP55NF06

STP55NF06

C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. F...
STP55NF06
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STP55NF06
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1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$
Quantity in stock : 5
KSC2073-2

KSC2073-2

Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical...
KSC2073-2
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KSC2073-2
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2.40$ VAT incl.
(2.40$ excl. VAT)
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Quantity in stock : 5713
BC547C

BC547C

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226....
BC547C
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0.0833$
Out of stock
2SA1302

2SA1302

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1302
[LONGDESCRIPTION]
2SA1302
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[MODCATID]
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2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 148
MJL21194

MJL21194

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @...
MJL21194
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MJL21194
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8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$
Quantity in stock : 68
IRFP3206

IRFP3206

C(in): 6540pF. Cost): 720pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of...
IRFP3206
[LONGDESCRIPTION]
IRFP3206
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4.23$
Quantity in stock : 3745
Z0103MN

Z0103MN

Conditioning: roll. Function: AC switching applications. Igt (max): 5mA. Igt (Type): 3mA. Ih (max): ...
Z0103MN
[LONGDESCRIPTION]
Z0103MN
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0.42$ VAT incl.
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0.42$

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