Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2 L. Equivalents: MMBT5401LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: screen printing/SMD code (2Lx Date Code)

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 0.6A. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: G1. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Spec info: complementary transistor (pair) MMBTA92. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Cost): 170pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Note: 2D. Marking on the case: 2D. Equivalents: PMBTA92.215. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Spec info: complementary transistor (pair) MMBTA42. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3EM. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 5mA. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

C(in): 702pF. Cost): 357pF. Channel type: N. Trr Diode (Min.): 256ns. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 6.95A. ID (T=25°C): 11A. Idss (max): 1uA. Marking on the case: 50R380. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 59.6ns. Td(on): 15.2ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Number of terminals: 2. Quantity per case: 1. Note: Low Power Loss by High Speed Switching and Low On-Resistance. Function: PFC Power Supply Stages, Switching Applications, Motor Control, DC-DC Converter. Drain-source protection : yes. G-S Protection: no

C(in): 890pF. Cost): 670pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 375 ns. Type of transistor: MOSFET. Function: PFC Power Supply Stages, Switching Applications, Motor Control, DC/DC Converters. Id(imp): 33A. ID (T=100°C): 6.95A. ID (T=25°C): 11A. Idss (max): 1uA. Marking on the case: 60R360P. Number of terminals: 3. Pd (Power Dissipation, Max): 31W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 18 ns. Technology: N-channel POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: JD. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 0.22A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 0.22A. Gate breakdown voltage Ugs [V]: 1.6V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 16 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 7 ns. Ciss Gate Capacitance [pF]: 45pF. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 350. Minimum hFE gain: 200. Collector current: 1.5A. Marking on the case: Y1. Pd (Power Dissipation, Max): 0.3W. Technology: 'Epitaxial Silicon Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 6V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6E. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Transistor type: BRT. Polarity: bipolar. Voltage (collector - emitter): 50V. Collector current Ic [A]: 0.1A. Power: 0.246W. Base-resistor resistance: 10k Ohms. Base-emitter resistance: 10k Ohms

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8A. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

BE diode: VAN. BE resistor: 42 Ohms. CE diode: VAN. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8E. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor