MJE15035G

Quantity	excl. VAT	VAT incl.
1 - 4	2.46$	2.46$
5 - 9	2.34$	2.34$
10 - 24	2.22$	2.22$
25 - 49	2.09$	2.09$
50 - 71	2.04$	2.04$

Quantity	U.P
1 - 4	2.46$	2.46$
5 - 9	2.34$	2.34$
10 - 24	2.22$	2.22$
25 - 49	2.09$	2.09$
50 - 71	2.04$	2.04$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 71

Set of 1

MJE15035G. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Spec info: hFE=100 (Min) @ IC=0.5Adc. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 16:25.

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Delivery in 2-3 days, with postal tracking!