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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 4A, TO-220, TO-220AB, 400V - MJE13005

NPN transistor, 4A, TO-220, TO-220AB, 400V - MJE13005
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.49$ 1.49$
5 - 9 1.41$ 1.41$
10 - 24 1.34$ 1.34$
25 - 49 1.26$ 1.26$
50 - 99 1.23$ 1.23$
100 - 249 1.20$ 1.20$
250+ 1.14$ 1.14$
Quantity U.P
1 - 4 1.49$ 1.49$
5 - 9 1.41$ 1.41$
10 - 24 1.34$ 1.34$
25 - 49 1.26$ 1.26$
50 - 99 1.23$ 1.23$
100 - 249 1.20$ 1.20$
250+ 1.14$ 1.14$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 4A, TO-220, TO-220AB, 400V - MJE13005. NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V. BE diode: no. CE diode: no. Quantity in stock updated on 12/04/2025, 08:25.

Equivalent products :

Quantity in stock : 50
ST13005A

ST13005A

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (accordi...
ST13005A
NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no
ST13005A
NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no
Set of 1
1.14$ VAT incl.
(1.14$ excl. VAT)
1.14$
Quantity in stock : 144
MJE13007

MJE13007

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (accordi...
MJE13007
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$
Quantity in stock : 64
BUL128D-B

BUL128D-B

NPN transistor, 4A, 400V. Collector current: 4A. Collector/emitter voltage Vceo: 400V. Semiconductor...
BUL128D-B
NPN transistor, 4A, 400V. Collector current: 4A. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Max hFE gain: 32. Minimum hFE gain: 10. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.5V. Quantity per case: 1. Function: high voltage, fast-switching. Spec info: TO-220. BE diode: no. CE diode: yes
BUL128D-B
NPN transistor, 4A, 400V. Collector current: 4A. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Max hFE gain: 32. Minimum hFE gain: 10. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.5V. Quantity per case: 1. Function: high voltage, fast-switching. Spec info: TO-220. BE diode: no. CE diode: yes
Set of 1
1.16$ VAT incl.
(1.16$ excl. VAT)
1.16$

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Quantity in stock : 50
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