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Semiconductors Transistors

MJE15030G

MJE15030G
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[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.41$ 2.41$
5 - 9 2.29$ 2.29$
10 - 24 2.17$ 2.17$
25 - 49 2.06$ 2.06$
50 - 99 2.03$ 2.03$
100 - 129 1.84$ 1.84$
Quantity U.P
1 - 4 2.41$ 2.41$
5 - 9 2.29$ 2.29$
10 - 24 2.17$ 2.17$
25 - 49 2.06$ 2.06$
50 - 99 2.03$ 2.03$
100 - 129 1.84$ 1.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 129
Set of 1

MJE15030G. Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 150V. Power: 50W. Max frequency: 30MHz. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031G. Quantity in stock updated on 04/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 74
MJE15030

MJE15030

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Ma...
MJE15030
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
MJE15030
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 561
MJE15032G

MJE15032G

Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collec...
MJE15032G
Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15033
MJE15032G
Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15033
Set of 1
2.18$ VAT incl.
(2.18$ excl. VAT)
2.18$

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Quantity in stock : 412
MJE15033G

MJE15033G

RoHS: yes. Housing: TO-220. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. ...
MJE15033G
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Quantity in stock : 250
2SA1943

2SA1943

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2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
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Quantity in stock : 91
2SA1837

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Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-L. Max ...
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2SA1123

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Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE g...
2SA1123
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Quantity in stock : 62
2SC4793

2SC4793

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
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Quantity in stock : 92
IRFP9240

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C(in): 1200pF. Cost): 370pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type o...
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JF0825S1H-R

JF0825S1H-R

Motor supply: direct current DC. Bearing: sliding bearing system. Voltage: 12V. Rotation speed and s...
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2SD712

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Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Collector current: 4A. Pd (Power D...
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Quantity in stock : 253
BDX33C

BDX33C

Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. T...
BDX33C
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