MJD45H11T4G

Quantity	excl. VAT	VAT incl.
1 - 4	1.15$	1.15$
5 - 9	1.09$	1.09$
10 - 24	1.03$	1.03$
25 - 49	0.98$	0.98$
50 - 99	0.95$	0.95$
100 - 156	0.84$	0.84$

Quantity	U.P
1 - 4	1.15$	1.15$
5 - 9	1.09$	1.09$
10 - 24	1.03$	1.03$
25 - 49	0.98$	0.98$
50 - 99	0.95$	0.95$
100 - 156	0.84$	0.84$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 156

Set of 1

MJD45H11T4G. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 16:25.

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Delivery in 2-3 days, with postal tracking!