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MJE13007

MJE13007
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[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.83$ 1.83$
5 - 9 1.74$ 1.74$
10 - 24 1.65$ 1.65$
25 - 49 1.56$ 1.56$
50 - 99 1.52$ 1.52$
100 - 191 1.48$ 1.48$
Quantity U.P
1 - 4 1.83$ 1.83$
5 - 9 1.74$ 1.74$
10 - 24 1.65$ 1.65$
25 - 49 1.56$ 1.56$
50 - 99 1.52$ 1.52$
100 - 191 1.48$ 1.48$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 191
Set of 1

MJE13007. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 02:25.

Equivalent products :

Quantity in stock : 18
ST13007A

ST13007A

Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30....
ST13007A
Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes
ST13007A
Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes
Set of 1
2.40$ VAT incl.
(2.40$ excl. VAT)
2.40$
Quantity in stock : 141
MJE13007-CDIL

MJE13007-CDIL

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching c...
MJE13007-CDIL
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007-CDIL
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$

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Quantity in stock : 191
MJE13007

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Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching ...
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CEL100UF450V

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Number of circuits: 2. Bandwidth [MHz]: 0.7 MHz. Slew rate [V/us]: 0.3V/us. Input offset voltage max...
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TIP122

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Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. ...
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ST13007A

ST13007A

Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30....
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CONN-B001-R

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