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Semiconductors Transistors

MJE13007-CDIL

MJE13007-CDIL
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.03$ 1.03$
5 - 9 0.98$ 0.98$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 99 0.85$ 0.85$
100 - 141 0.77$ 0.77$
Quantity U.P
1 - 4 1.03$ 1.03$
5 - 9 0.98$ 0.98$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 99 0.85$ 0.85$
100 - 141 0.77$ 0.77$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 141
Set of 1

MJE13007-CDIL. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 191
MJE13007

MJE13007

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching ...
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$

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