Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.00$ | 2.00$ |
5 - 9 | 1.90$ | 1.90$ |
10 - 24 | 1.80$ | 1.80$ |
25 - 49 | 1.70$ | 1.70$ |
50 - 75 | 1.66$ | 1.66$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.00$ | 2.00$ |
5 - 9 | 1.90$ | 1.90$ |
10 - 24 | 1.80$ | 1.80$ |
25 - 49 | 1.70$ | 1.70$ |
50 - 75 | 1.66$ | 1.66$ |
KSB1366GTU. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Collector current: 3A. Marking on the case: B1366-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) KSD2012. BE diode: no. CE diode: no. Quantity in stock updated on 22/01/2025, 08:25.
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