KSC2310-Y

Quantity	excl. VAT	VAT incl.
1 - 4	0.81$	0.81$
5 - 9	0.77$	0.77$
10 - 24	0.73$	0.73$
25 - 49	0.69$	0.69$
50 - 54	0.67$	0.67$

Quantity	U.P
1 - 4	0.81$	0.81$
5 - 9	0.77$	0.77$
10 - 24	0.73$	0.73$
25 - 49	0.69$	0.69$
50 - 54	0.67$	0.67$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 54

Set of 1

KSC2310-Y. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.05A. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 06:25.

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Delivery in 2-3 days, with postal tracking!