Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.45$ | 2.45$ |
5 - 9 | 2.33$ | 2.33$ |
10 - 24 | 2.20$ | 2.20$ |
25 - 49 | 2.08$ | 2.08$ |
50 - 99 | 2.03$ | 2.03$ |
100 - 201 | 1.98$ | 1.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.45$ | 2.45$ |
5 - 9 | 2.33$ | 2.33$ |
10 - 24 | 2.20$ | 2.20$ |
25 - 49 | 2.08$ | 2.08$ |
50 - 99 | 2.03$ | 2.03$ |
100 - 201 | 1.98$ | 1.98$ |
KSC5027-O. Cost): 60pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed Switching. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 3A. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 11:25.
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