Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.25$ | 9.25$ |
2 - 2 | 8.79$ | 8.79$ |
3 - 4 | 8.33$ | 8.33$ |
5 - 9 | 7.87$ | 7.87$ |
10 - 19 | 7.68$ | 7.68$ |
20 - 29 | 7.50$ | 7.50$ |
30+ | 7.22$ | 7.22$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.25$ | 9.25$ |
2 - 2 | 8.79$ | 8.79$ |
3 - 4 | 8.33$ | 8.33$ |
5 - 9 | 7.87$ | 7.87$ |
10 - 19 | 7.68$ | 7.68$ |
20 - 29 | 7.50$ | 7.50$ |
30+ | 7.22$ | 7.22$ |
KSC5386TU. BE resistor: 10. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Switching 0.1us. Max hFE gain: 22. Minimum hFE gain: 8. Collector current: 7A. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 4.2V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: VEBO 6V. Housing: TO-3PF (SOT399). BE diode: no. CE diode: yes. Quantity in stock updated on 11/01/2025, 22:25.
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