Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.41$ | 0.41$ |
10 - 24 | 0.39$ | 0.39$ |
25 - 49 | 0.37$ | 0.37$ |
50 - 99 | 0.35$ | 0.35$ |
100 - 125 | 0.32$ | 0.32$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.41$ | 0.41$ |
10 - 24 | 0.39$ | 0.39$ |
25 - 49 | 0.37$ | 0.37$ |
50 - 99 | 0.35$ | 0.35$ |
100 - 125 | 0.32$ | 0.32$ |
KSC2310-O. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 0.05A. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.
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