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KSC2310-O

KSC2310-O
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.41$ 0.41$
10 - 24 0.39$ 0.39$
25 - 49 0.37$ 0.37$
50 - 99 0.35$ 0.35$
100 - 125 0.32$ 0.32$
Quantity U.P
1 - 9 0.41$ 0.41$
10 - 24 0.39$ 0.39$
25 - 49 0.37$ 0.37$
50 - 99 0.35$ 0.35$
100 - 125 0.32$ 0.32$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 125
Set of 1

KSC2310-O. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 0.05A. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.

Equivalent products :

Quantity in stock : 298
BF422

BF422

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp...
BF422
Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 50mA. Ic(pulse): 100mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) BF423. BE diode: no. CE diode: no
BF422
Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 50mA. Ic(pulse): 100mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) BF423. BE diode: no. CE diode: no
Set of 1
0.32$ VAT incl.
(0.32$ excl. VAT)
0.32$

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BF423

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Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector c...
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BC560C

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Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380....
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Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
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BC393

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Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Collector current: 0.1A. Pd (Pow...
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BC550C

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Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAd...
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NIPPEL-TOP3

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Quantity in stock : 34
2SC4793

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Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
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BC212B

BC212B

Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington t...
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Quantity in stock : 1895
MF0207-909K

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Resistance: 909k Ohms. Power: 0.6W. Tolerance: 1%. Series: MF0207. Dimensions: 6x2.3mm. Temperature ...
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