Electronic components and equipment, for businesses and individuals

KSA733-Y

KSA733-Y
Quantity excl. VAT VAT incl.
1 - 9 0.47$ 0.47$
10 - 24 0.44$ 0.44$
25 - 49 0.42$ 0.42$
50 - 99 0.40$ 0.40$
100 - 249 0.39$ 0.39$
250 - 499 0.38$ 0.38$
500+ 0.36$ 0.36$
Quantity U.P
1 - 9 0.47$ 0.47$
10 - 24 0.44$ 0.44$
25 - 49 0.42$ 0.42$
50 - 99 0.40$ 0.40$
100 - 249 0.39$ 0.39$
250 - 499 0.38$ 0.38$
500+ 0.36$ 0.36$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

KSA733-Y. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Collector current: 0.15A. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Quantity in stock updated on 22/01/2025, 08:25.

Equivalent products :

Quantity in stock : 881
BC212B

BC212B

Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington t...
BC212B
Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
BC212B
Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$
Quantity in stock : 1168
2SA733

2SA733

Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max h...
2SA733
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 60V. Collector/emitter voltage Vceo: 60V. Vebo: 5V
2SA733
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 60V. Collector/emitter voltage Vceo: 60V. Vebo: 5V
Set of 10
1.52$ VAT incl.
(1.52$ excl. VAT)
1.52$

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