IXTQ88N30P

Quantity	excl. VAT	VAT incl.
1 - 1	14.36$	14.36$
2 - 2	13.64$	13.64$
3 - 4	12.93$	12.93$
5 - 9	12.21$	12.21$
10 - 14	11.92$	11.92$
15 - 19	11.63$	11.63$
20 - 36	11.20$	11.20$

Quantity	U.P
1 - 1	14.36$	14.36$
2 - 2	13.64$	13.64$
3 - 4	12.93$	12.93$
5 - 9	12.21$	12.21$
10 - 14	11.92$	11.92$
15 - 19	11.63$	11.63$
20 - 36	11.20$	11.20$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 36

Set of 1

IXTQ88N30P. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 220A. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. IDss (min): 100uA. Pd (Power Dissipation, Max): 600W. On-resistance Rds On: 40m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 25/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!