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IXTP90N055T2

IXTP90N055T2
Quantity excl. VAT VAT incl.
1 - 4 4.19$ 4.19$
5 - 9 3.98$ 3.98$
10 - 24 3.77$ 3.77$
25 - 40 3.56$ 3.56$
Quantity U.P
1 - 4 4.19$ 4.19$
5 - 9 3.98$ 3.98$
10 - 24 3.77$ 3.77$
25 - 40 3.56$ 3.56$
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Quantity in stock : 40
Set of 1

IXTP90N055T2. C(in): 2770pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Ic(T=100°C): 75A. Id(imp): 240A. ID (T=25°C): 90A. Idss (max): 200uA. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 11:25.

Equivalent products :

Quantity in stock : 40
IXTP90N055T

IXTP90N055T

C(in): 2500pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of...
IXTP90N055T
C(in): 2500pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Ic(T=100°C): 75A. Id(imp): 240A. ID (T=25°C): 90A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. On-resistance Rds On: 0.066 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IXTP90N055T
C(in): 2500pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Ic(T=100°C): 75A. Id(imp): 240A. ID (T=25°C): 90A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. On-resistance Rds On: 0.066 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
4.31$ VAT incl.
(4.31$ excl. VAT)
4.31$

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