IXTP36N30P

Quantity	excl. VAT	VAT incl.
1 - 1	7.08$	7.08$
2 - 2	6.73$	6.73$
3 - 4	6.38$	6.38$
5 - 9	6.02$	6.02$
10 - 19	5.88$	5.88$
20 - 29	5.74$	5.74$
30 - 110	5.53$	5.53$

Quantity	U.P
1 - 1	7.08$	7.08$
2 - 2	6.73$	6.73$
3 - 4	6.38$	6.38$
5 - 9	6.02$	6.02$
10 - 19	5.88$	5.88$
20 - 29	5.74$	5.74$
30 - 110	5.53$	5.53$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 110

Set of 1

IXTP36N30P. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 03:25.

Technical documentation