Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 7.08$ | 7.08$ |
2 - 2 | 6.73$ | 6.73$ |
3 - 4 | 6.38$ | 6.38$ |
5 - 9 | 6.02$ | 6.02$ |
10 - 19 | 5.88$ | 5.88$ |
20 - 29 | 5.74$ | 5.74$ |
30 - 110 | 5.53$ | 5.53$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 7.08$ | 7.08$ |
2 - 2 | 6.73$ | 6.73$ |
3 - 4 | 6.38$ | 6.38$ |
5 - 9 | 6.02$ | 6.02$ |
10 - 19 | 5.88$ | 5.88$ |
20 - 29 | 5.74$ | 5.74$ |
30 - 110 | 5.53$ | 5.53$ |
N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V - IXTP36N30P. N-channel transistor, 36A, 36A, 200uA, 92m Ohms, TO-220, TO-220, 300V. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 92m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 04:25.
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