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Semiconductors Transistors

IXTQ36N30P

IXTQ36N30P
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.10$ 9.10$
2 - 2 8.64$ 8.64$
3 - 4 8.19$ 8.19$
5 - 9 7.73$ 7.73$
10 - 13 7.55$ 7.55$
Quantity U.P
1 - 1 9.10$ 9.10$
2 - 2 8.64$ 8.64$
3 - 4 8.19$ 8.19$
5 - 9 7.73$ 7.73$
10 - 13 7.55$ 7.55$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

IXTQ36N30P. C(in): 2250pF. Cost): 370pF. Channel type: N. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 07:25.

Technical documentation

Equivalent products :

Quantity in stock : 110
IXTP36N30P

IXTP36N30P

C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
IXTP36N30P
C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no
IXTP36N30P
C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no
Set of 1
7.08$ VAT incl.
(7.08$ excl. VAT)
7.08$

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