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Semiconductors Transistors

KRC102M

KRC102M
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 1.85$ 1.85$
Quantity U.P
1 - 1 1.85$ 1.85$
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Quantity in stock : 1
Set of 1

KRC102M. Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: TO-92M. Quantity in stock updated on 15/01/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 24
FJN3302R

FJN3302R

Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Co...
FJN3302R
Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Collector current: 100mA. Ic(pulse): 300mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: SAMSUNG 0504-000117
FJN3302R
Semiconductor material: silicon. FT: 250 MHz. Function: switching circuits. Minimum hFE gain: 30. Collector current: 100mA. Ic(pulse): 300mA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: SAMSUNG 0504-000117
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$

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TIP3055

TIP3055

Collector current: 15A. Housing: TO-247. Conditioning: plastic tube. Semiconductor material: silicon...
TIP3055
[LONGDESCRIPTION]
TIP3055
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ATMEGA328P-PU

ATMEGA328P-PU

RoHS: yes. Maximum CPU clock frequency: 1.8 MHz/4 MHz/10 MHz. Number of I/O: 23. Program storage mem...
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CR-06JL7-0R

CR-06JL7-0R

Resistance: 0 Ohm. Power: 0.25W. Housing: SMD 1206. Max Continuous current: 2A. Resistance (R): 0 ...
CR-06JL7-0R
[LONGDESCRIPTION]
CR-06JL7-0R
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HFA15TB60

HFA15TB60

Cj: 25pF. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 42 ns. ...
HFA15TB60
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HFA15TB60
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Quantity in stock : 23
PP-1916

PP-1916

Material: FR2. Plastic foil: single sided, 3 soldering pads. Dimensions: 100x160mm. Printed circuit ...
PP-1916
[LONGDESCRIPTION]
PP-1916
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2N2222A

2N2222A

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: P...
2N2222A
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2N2222A
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Quantity in stock : 11983
MURS120T3G

MURS120T3G

Diode Tff(25°C): 25 ns. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafa...
MURS120T3G
[LONGDESCRIPTION]
MURS120T3G
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BC847C

BC847C

Cost): 4.5pF. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain:...
BC847C
[LONGDESCRIPTION]
BC847C
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0.0368$ VAT incl.
(0.0368$ excl. VAT)
0.0368$
Quantity in stock : 2358
FR207

FR207

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR207
[LONGDESCRIPTION]
FR207
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0.25$ VAT incl.
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0.25$

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