Transistors

C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 5.6A. ID (T=25°C): 8.8A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 350pF. Cost): 48pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 4.4 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 10 ns. Technology: V-MOS. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 600V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 68A. ID (T=100°C): 10A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ24NPBF. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 640pF. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ24NS. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.07 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 700pF. Cost): 240pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 100A. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ34NPBF. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 31 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 160A. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. On-resistance Rds On: 0.0175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ44NPBF. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 31A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 160A. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 94W. On-resistance Rds On: 17.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Ultra Low On-Resistance. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZ44NS. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 49A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0175 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 1470pF. Maximum dissipation Ptot [W]: 94W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1812pF. Cost): 393pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 220A. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 55A. Power: 115W. On-resistance Rds On: 0.016 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 60V

C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFZ46NPBF. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0165 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1696pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Housing: TO-220AB. Manufacturer's marking: IRFZ48NPBF. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 34 ns. Ciss Gate Capacitance [pF]: 1970pF. Maximum dissipation Ptot [W]: 130W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 64A. Power: 130W. On-resistance Rds On: 0.014 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 55V

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Switch-on time ton [nsec.]: 43 ns. Switch-off delay tf[nsec.]: 240 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 64A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 180 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Td(off): 180 ns. Td(on): 54 ns. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.27V. Maximum saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 32A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 19A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 38A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 10A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 38A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 13A. Switch-on time ton [nsec.]: 39 ns. Switch-off delay tf[nsec.]: 93 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 52A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 13A. Switch-on time ton [nsec.]: 21 ns. Switch-off delay tf[nsec.]: 86 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 52A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C