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Electronic components and equipment, for businesses and individuals

Product categories :

Semiconductors Transistors

IRFZ34N

Quantity	excl. VAT	VAT incl.
1 - 4	1.31$	1.31$
5 - 9	1.24$	1.24$
10 - 24	1.18$	1.18$
25 - 49	1.11$	1.11$
50 - 99	1.09$	1.09$
100 - 108	0.97$	0.97$

Quantity	U.P
1 - 4	1.31$	1.31$
5 - 9	1.24$	1.24$
10 - 24	1.18$	1.18$
25 - 49	1.11$	1.11$
50 - 99	1.09$	1.09$
100 - 108	0.97$	0.97$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 108

Set of 1

IRFZ34N. C(in): 700pF. Cost): 240pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 57 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 100A. ID (T=100°C): 20A. ID (T=25°C): 29A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 31 ns. Td(on): 7 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 28/12/2024, 13:25.

Technical documentation

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IRFZ44N

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