Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.33$ | 1.33$ |
5 - 9 | 1.27$ | 1.27$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 49 | 1.13$ | 1.13$ |
50 - 56 | 1.11$ | 1.11$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.33$ | 1.33$ |
5 - 9 | 1.27$ | 1.27$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 49 | 1.13$ | 1.13$ |
50 - 56 | 1.11$ | 1.11$ |
IRFZ46N. C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 18:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.