Transistors

C(in): 270pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: FET. Function: High-speed switching. Id(imp): 20A. ID (T=100°C): 3.2A. ID (T=25°C): 5.1A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9.6 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9014PBF. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -5.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 9.6 ns. Ciss Gate Capacitance [pF]: 270pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 5.6A. ID (T=25°C): 8.8A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9024N. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.175 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9024N. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.175 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 38W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9024PBF. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -8.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -5.3A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 570pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.6A. ID (T=25°C): 5.6A. Idss (max): 5.6A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V

C(in): 350pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR9120N. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -3.9A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 340pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 8.8 ns. Technology: Power MOSFET. Housing (according to data sheet): D-PAK ( TO-252AA ). Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Function: dynamic dv/dt ratio, fast switching. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9220PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 7.3 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 4.4 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFRC20PBF. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4.4 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. Id(imp): 36A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 26A. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 6.5A. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.34 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Function: Low gate charge (typical 22nC), Low Crss

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 32A. ID (T=100°C): 3.7A. ID (T=25°C): 5.8A. Idss (max): 5.8A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.45 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V

C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 40A. ID (T=100°C): 3.9A. ID (T=25°C): 5.5A. Idss (max): 1000uA. IDss (min): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 370pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.7 ns. Technology: HEXFET® Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: Ultra Low On-Resistance, Fast Switching

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: I-PAK. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU024NPBF. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 8.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 4.3A. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET® Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 100V

C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. ID (T=100°C): 1.7A. ID (T=25°C): 2.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 360pF. Cost): 92pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 8A. ID (T=100°C): 1.4A. ID (T=25°C): 2.4A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 33 ns. Technology: third-generation power MOSFET transistor. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-251AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU420PBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 2.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 33 ns. Maximum dissipation Ptot [W]: 42W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ciss Gate Capacitance [pF]: 360pF

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-251AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFU4620PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 24A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.78 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 13.4 ns. Switch-off delay tf[nsec.]: 25.4 ns. Ciss Gate Capacitance [pF]: 1710pF. Maximum dissipation Ptot [W]: 144W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C