Transistors

C(in): 1800pF. Cost): 120pF. Channel type: N. Function: Up to 40kHz in hard switching,>200kHz res.mode. Collector current: 41A. Ic(pulse): 82A. Ic(T=100°C): 21A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 24 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.43V. Maximum saturation voltage VCE(sat): 3.1V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: no. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PH40UD. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 46 ns. Switch-off delay tf[nsec.]: 90 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 82A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2800pF. Cost): 140pF. Channel type: N. Collector current: 45A. Ic(pulse): 90A. Ic(T=100°C): 24A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.77V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Spec info: td (on) 36ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no

C(in): 2800pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 90 ns. Collector current: 45A. Ic(pulse): 90A. Ic(T=100°C): 24A. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 87 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.77V. Collector/emitter voltage Vceo: 1220V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no

Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 45A. Ic(pulse): 180A. Ic(T=100°C): 24A. Marking on the case: IRG4PH50U. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 35 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.56V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). C(in): 3600pF. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. CE diode: no. Germanium diode: no

C(in): 850pF. Cost): 75pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 92 ns. Collector current: 31A. Ic(pulse): 62A. Ic(T=100°C): 15A. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 184 ns. Td(on): 34 ns. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 2.2V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Number of terminals: 3. Spec info: Ultrafast Soft Recovery Diode. CE diode: yes. Germanium diode: no

C(in): 3025pF. Cost): 245pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 90A. Ic(pulse): 144A. Ic(T=100°C): 48A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v. Number of terminals: 3. CE diode: yes. Germanium diode: no

C(in): 2250pF. Cost): 110pF. Channel type: N. Conditioning unit: 25. Collector current: 70A. Ic(pulse): 250A. Ic(T=100°C): 40A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 36ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+140°C. Saturation voltage VCE(sat): 1.29V. Maximum saturation voltage VCE(sat): 2.57V. Collector/emitter voltage Vceo: 300V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.6V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. CE diode: no. Germanium diode: no

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L1004S. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 130A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0065 Ohms @ 78A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 5330pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 6590pF. Cost): 1710pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 63 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 640A. ID (T=100°C): 110A. ID (T=25°C): 160A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.004 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 160A. Power: 200W. On-resistance Rds On: 0.004 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 40V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 790A. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss (max): 200A. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.005 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Function: Fast Switching, Logic-Level Gate Drive

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL1404ZPBF. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 140A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.003 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 5080pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 5080pF. Cost): 970pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 790A. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss: 20uA. Idss (max): 200A. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 2.5M Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 40V. G-S Protection: no

C(in): 3290pF. Cost): 1270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 400A. ID (T=100°C): 60A. ID (T=25°C): 116A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL2203NPBF. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 2.7V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2203NS. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 60A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 360A. ID (T=100°C): 74A. ID (T=25°C): 104A. Idss (max): 104A. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L2505S. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 104A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 54A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3700pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 190A. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.026 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3502. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L3502S. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 110A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.007 Ohms @ 64A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 96 ns. Ciss Gate Capacitance [pF]: 4700pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 3600pF. Cost): 870pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 94us. Type of transistor: MOSFET. Id(imp): 310A. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 37 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/emitter voltage VGE(th)max.: 2V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Function: Logic-Level Gate Drive, Fast Switching. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRL3705N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 89A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ 46A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 37 ns. Maximum dissipation Ptot [W]: 170W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Ciss Gate Capacitance [pF]: 3600pF