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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V - IRFZ44V

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V - IRFZ44V
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.50$ 1.50$
25 - 49 1.47$ 1.47$
50 - 99 1.43$ 1.43$
100 - 249 1.28$ 1.28$
250 - 259 1.23$ 1.23$
Quantity U.P
1 - 4 1.63$ 1.63$
5 - 9 1.55$ 1.55$
10 - 24 1.50$ 1.50$
25 - 49 1.47$ 1.47$
50 - 99 1.43$ 1.43$
100 - 249 1.28$ 1.28$
250 - 259 1.23$ 1.23$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 259
Set of 1

N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V - IRFZ44V. N-channel transistor, 39A, 55A, 250uA, 16.5m Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 16.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1812pF. Cost): 393pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. G-S Protection: no. Id(imp): 220A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 115W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 04/06/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 67
STP60NF06

STP60NF06

N-channel transistor, 42A, 60A, 10uA, 0.014 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 42A. ID (T=2...
STP60NF06
N-channel transistor, 42A, 60A, 10uA, 0.014 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1810pF. Cost): 360pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 73ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 110W. RoHS: yes. Spec info: Exceptional dv/dt capability. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: STripFET II POWER MOSFET, Ultra Low ON-Resistance. Operating temperature: -65...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STP60NF06
N-channel transistor, 42A, 60A, 10uA, 0.014 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 1810pF. Cost): 360pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 73ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 110W. RoHS: yes. Spec info: Exceptional dv/dt capability. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 16 ns. Technology: STripFET II POWER MOSFET, Ultra Low ON-Resistance. Operating temperature: -65...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.41$ VAT incl.
(1.41$ excl. VAT)
1.41$

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