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Semiconductors Transistors

IRFZ44N

IRFZ44N
[TITLE]
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.26$ 1.26$
5 - 9 1.20$ 1.20$
10 - 24 1.14$ 1.14$
25 - 49 1.07$ 1.07$
50 - 99 1.05$ 1.05$
100 - 249 0.95$ 0.95$
250 - 314 0.90$ 0.90$
Quantity U.P
1 - 4 1.26$ 1.26$
5 - 9 1.20$ 1.20$
10 - 24 1.14$ 1.14$
25 - 49 1.07$ 1.07$
50 - 99 1.05$ 1.05$
100 - 249 0.95$ 0.95$
250 - 314 0.90$ 0.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 314
Set of 1

IRFZ44N. C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 63us. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 160A. ID (T=100°C): 35A. ID (T=25°C): 49A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 94W. On-resistance Rds On: 0.0175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 24/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 163
IRFZ48N

IRFZ48N

C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
IRFZ48N
C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFZ48N
C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 68 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 210A. ID (T=100°C): 32A. ID (T=25°C): 64A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
1.65$ VAT incl.
(1.65$ excl. VAT)
1.65$
Quantity in stock : 56
IRFZ46N

IRFZ46N

C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Qua...
IRFZ46N
C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFZ46N
C(in): 1696pF. Cost): 407pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 67 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 180A. ID (T=100°C): 37A. ID (T=25°C): 53A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 16.5m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.33$ VAT incl.
(1.33$ excl. VAT)
1.33$

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Quantity in stock : 214
LNK304GN

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On-resistance Rds On: 24 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Se...
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FRN01WK0101A10

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Resistance: 100 Ohms. Power: 1W. Resistor type: fuse resistor. Temperature stability: 350ppm/°C. Nu...
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NFR-100-0R47

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Resistance: 0.47 Ohms. Power: 1W. Fuse properties: fuse resistor. Temperature stability: 350ppm/°C....
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IRF740

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C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. ...
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IRF3205

IRF3205

C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of...
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IRFB4019

IRFB4019

C(in): 800pF. Cost): 74pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Ze...
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Quantity in stock : 112
LNK364GN

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Function: Energy Efficient, Low Power Off-Line Switcher. RoHS: yes. Assembly/installation: surface-m...
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KKZW-12-7

KKZW-12-7

Material: Halogen-free polyolefin. Breakdown voltage: 15 kV/mm. RoHS: yes. Color: black. Operating t...
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Quantity in stock : 4431
FUR1-2WS-10R0

FUR1-2WS-10R0

Resistance: 10 Ohms. Power: 0.5W. Tolerance: 5%. Series: 0207. Temperature coefficient: 2000ppm. Dim...
FUR1-2WS-10R0
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