IRFZ24N

Quantity	excl. VAT	VAT incl.
1 - 4	1.04$	1.04$
5 - 9	0.98$	0.98$
10 - 24	0.93$	0.93$
25 - 49	0.88$	0.88$
50 - 99	0.86$	0.86$
100 - 164	0.84$	0.84$

Quantity	U.P
1 - 4	1.04$	1.04$
5 - 9	0.98$	0.98$
10 - 24	0.93$	0.93$
25 - 49	0.88$	0.88$
50 - 99	0.86$	0.86$
100 - 164	0.84$	0.84$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 164

Set of 1

IRFZ24N. C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 68A. ID (T=100°C): 10A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!