Transistors

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 31A. Switch-on time ton [nsec.]: 42 ns. Switch-off delay tf[nsec.]: 230 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 28A. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 160 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 56A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 34A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 68A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Function: Ultra Fast Speed IGBT (8-40KHz). Collector current: 23A. Ic(pulse): 92A. Ic(T=100°C): 12A. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 27 ns. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.59V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Number of terminals: 3. CE diode: no. Germanium diode: no

C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Trr Diode (Min.): 42 ns. Function: UltraFast CoPack IGBT. Collector current: 23A. Ic(pulse): 92A. Ic(T=100°C): 12A. Marking on the case: IRG4BC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.1V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 980pF. Cost): 71pF. Channel type: N. Conditioning: plastic tube. Function: power MOSFET transistor up to 150 kHz. Collector current: 23A. Ic(pulse): 92A. Ic(T=100°C): 12A. Marking on the case: IRG 4BC30W. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 99 ns. Td(on): 25 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 50. Spec info: Vce(on)--2.1V (IC=12A), 2.45V (IC=23A). CE diode: no. Germanium diode: no

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40K. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 25A. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 140 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 60A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 650 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 34 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 31A. Switch-on time ton [nsec.]: 42 ns. Switch-off delay tf[nsec.]: 230 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 920pF. Cost): 110pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Collector current: 28A. Ic(pulse): 58A. Ic(T=100°C): 16A. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 60 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.21V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Spec info: UltraFast IGBT transistor. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 28A. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 160 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 58A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 34A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 68A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1100pF. Cost): 73pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Trr Diode (Min.): 42 ns. Function: ULTRA FAST. Collector current: 23A. Ic(pulse): 92A. ID (T=100°C): 12A. Marking on the case: IRG4PC30UD. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 91 ns. Td(on): 40 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.95V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2200pF. Cost): 140pF. Channel type: N. Conditioning: TO-247AC. Conditioning unit: PCB through-hole mounting. Trr Diode (Min.): 42 ns. Collector current: 49A. Ic(pulse): 84A. Ic(T=100°C): 27A. Marking on the case: 230 ns. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 63 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: yes. Germanium diode: no

C(in): 1600pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 42A. Ic(pulse): 84A. Ic(T=100°C): 25A. Marking on the case: G4PC40K. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: no. Germanium diode: no

C(in): 1600pF. Cost): 130pF. Channel type: N. Trr Diode (Min.): 42 ns. Collector current: 42A. Ic(pulse): 84A. Ic(T=100°C): 25A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 53 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.6V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: yes. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 42A. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40K. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 42A. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 140 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2100pF. Cost): 140pF. Channel type: N. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 34 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.72V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Number of terminals: 3. Function: Ultra Fast, for high operating frequencies 8-40kHz. CE diode: no. Germanium diode: no

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1900pF. Cost): 140pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 27 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.05V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: no. Germanium diode: no