Transistors

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 7.8A. Power: 190W. On-resistance Rds On: 1.2 Ohms. Housing: TO-247AC HV. Drain-source voltage (Vds): 800V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: <63/214ns. ID (T=25°C): 4.7A. Idss (max): 4.7A. Assembly/installation: PCB through-hole mounting. Technology: V-MOS L. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 900V

C(in): 2900pF. Cost): 270pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.2A. ID (T=25°C): 6.7A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 1.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 20 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPF50PBF. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 6.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.6 Ohms @ 4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 2900pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2800pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 3.9A. ID (T=25°C): 6.1A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 19 ns. Technology: HEXFET® Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/emitter voltage VGE(th) min.: 2V. Vgs(th) max.: 4 v. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 6.1A. Power: 190W. Housing: TO-247AC. On-resistance Rds On: 2 Ohms. Drain-source voltage (Vds): 1000V

C(in): 5579pF. Cost): 810pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 144A. ID (T=100°C): 23A. ID (T=25°C): 36A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.13 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52 ns. Td(on): 23 ns. Technology: Power MOSFET. Housing: 17.4k Ohms. Housing (according to data sheet): SUPER247. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: 17.4k Ohms. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRFPS37N50APBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 36A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 5580pF. Maximum dissipation Ptot [W]: 446W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 370pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Id(imp): 68A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.075 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 4.9 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR024N. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.075 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.9 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 370pF. Maximum dissipation Ptot [W]: 45W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 180pF. Cost): 80pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 17A. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR110PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 4.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1300pF. Cost): 410pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 65 ns. Type of transistor: MOSFET. Id(imp): 160A. ID (T=100°C): 31A. ID (T=25°C): 44A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 107W. On-resistance Rds On: 0.027 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 47 ns. Td(on): 7.3 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+155°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 44A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 26A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR1205N. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 6.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.21 Ohms @ 5.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FR220N. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.4 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 300pF. Maximum dissipation Ptot [W]: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 3.1A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 1.8 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 400V

C(in): 2030pF. Cost): 470pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 280A. ID (T=100°C): 49A. ID (T=25°C): 71A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 13 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no

C(in): 2330pF. Cost): 460pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Id(imp): 340A. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 5.2m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Spec info: AUTOMOTIVE MOSFET. Function: Ultra Low On-Resistance, Ultra-Low Gate Impedance. Drain-source protection : yes. G-S Protection: no

C(in): 640pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 16A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.115 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 37 ns. Td(on): 6.4 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: td(on) 7ns. Id(imp): 100A. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss: 0.025mA. Idss (max): 27A. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 1200pF. Cost): 520pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71ms. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: IRFR5305. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET ® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 650pF. Cost): 270pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 64A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRFR5505TRLPBF, IRFR5505TRPBF. Pd (Power Dissipation, Max): 57W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no