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Semiconductors Transistors

IRFU420

IRFU420
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.99$ 0.99$
5 - 9 0.94$ 0.94$
10 - 24 0.89$ 0.89$
25 - 39 0.84$ 0.84$
Quantity U.P
1 - 4 0.99$ 0.99$
5 - 9 0.94$ 0.94$
10 - 24 0.89$ 0.89$
25 - 39 0.84$ 0.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 39
Set of 1

IRFU420. C(in): 360pF. Cost): 92pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 8A. ID (T=100°C): 1.4A. ID (T=25°C): 2.4A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 33 ns. Technology: third-generation power MOSFET transistor. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 13/01/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 54
IRFR420

IRFR420

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. I...
IRFR420
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFR420
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss: 0.025mA. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing (according to data sheet): D-PAK TO-252AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.23$ VAT incl.
(1.23$ excl. VAT)
1.23$

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LAMP-1-2W-12

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