N-channel transistor, 3.9A, 5.5A, 1000uA, 0.55 Ohms, TO-220FP, TO-220F, 400V - IRFS740

N-channel transistor, 3.9A, 5.5A, 1000uA, 0.55 Ohms, TO-220FP, TO-220F, 400V - IRFS740. N-channel transistor, 3.9A, 5.5A, 1000uA, 0.55 Ohms, TO-220FP, TO-220F, 400V. ID (T=100°C): 3.9A. ID (T=25°C): 5.5A. Idss (max): 1000uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 400V. C(in): 1500pF. Cost): 178pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 40A. IDss (min): 250uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer Samsung. Quantity in stock updated on 08/06/2025, 00:25.