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Semiconductors Transistors

IRFR9120

IRFR9120
Quantity excl. VAT VAT incl.
1 - 4 0.97$ 0.97$
5 - 9 0.92$ 0.92$
10 - 24 0.87$ 0.87$
25 - 49 0.82$ 0.82$
50 - 99 0.80$ 0.80$
100 - 249 0.78$ 0.78$
250+ 0.75$ 0.75$
Quantity U.P
1 - 4 0.97$ 0.97$
5 - 9 0.92$ 0.92$
10 - 24 0.87$ 0.87$
25 - 49 0.82$ 0.82$
50 - 99 0.80$ 0.80$
100 - 249 0.78$ 0.78$
250+ 0.75$ 0.75$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

IRFR9120. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.6A. ID (T=25°C): 5.6A. Idss (max): 5.6A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 100V. Quantity in stock updated on 13/01/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 22
IRFR9120N

IRFR9120N

C(in): 350pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of...
IRFR9120N
C(in): 350pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFR9120N
C(in): 350pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$

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