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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.07$ 1.07$
25 - 49 1.04$ 1.04$
50 - 99 1.02$ 1.02$
100 - 213 0.90$ 0.90$
Quantity U.P
1 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.07$ 1.07$
25 - 49 1.04$ 1.04$
50 - 99 1.02$ 1.02$
100 - 213 0.90$ 0.90$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 213
Set of 1

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N. P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Infineon (irf). Quantity in stock updated on 03/06/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 30
IRFU9024N

IRFU9024N

P-channel transistor, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 11A. Idss...
IRFU9024N
P-channel transistor, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFU9024N
P-channel transistor, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$

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