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IRFR9024N

IRFR9024N
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.04$ 1.04$
25 - 49 0.98$ 0.98$
50 - 63 0.96$ 0.96$
Quantity U.P
1 - 4 1.16$ 1.16$
5 - 9 1.10$ 1.10$
10 - 24 1.04$ 1.04$
25 - 49 0.98$ 0.98$
50 - 63 0.96$ 0.96$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 63
Set of 1

IRFR9024N. C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 03:25.

Equivalent products :

Quantity in stock : 34
IRFU9024N

IRFU9024N

C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of ...
IRFU9024N
C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFU9024N
C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$

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