Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.16$ | 1.16$ |
5 - 9 | 1.10$ | 1.10$ |
10 - 24 | 1.04$ | 1.04$ |
25 - 49 | 0.98$ | 0.98$ |
50 - 63 | 0.96$ | 0.96$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.16$ | 1.16$ |
5 - 9 | 1.10$ | 1.10$ |
10 - 24 | 1.04$ | 1.04$ |
25 - 49 | 0.98$ | 0.98$ |
50 - 63 | 0.96$ | 0.96$ |
IRFR9024N. C(in): 350pF. Cost): 170pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 8A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 03:25.
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