Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.58$ | 1.58$ |
5 - 9 | 1.51$ | 1.51$ |
10 - 24 | 1.43$ | 1.43$ |
25 - 49 | 1.35$ | 1.35$ |
50 - 99 | 1.32$ | 1.32$ |
100 - 249 | 1.21$ | 1.21$ |
250 - 276 | 1.15$ | 1.15$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.58$ | 1.58$ |
5 - 9 | 1.51$ | 1.51$ |
10 - 24 | 1.43$ | 1.43$ |
25 - 49 | 1.35$ | 1.35$ |
50 - 99 | 1.32$ | 1.32$ |
100 - 249 | 1.21$ | 1.21$ |
250 - 276 | 1.15$ | 1.15$ |
IRFRC20. C(in): 350pF. Cost): 48pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.3A. ID (T=25°C): 2A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 4.4 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.
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