IRFR9120N

IRFR9120N. C(in): 350pF. Cost): 110pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET® Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/01/2025, 15:25.