Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.74$ | 0.74$ |
100 - 249 | 0.75$ | 0.75$ |
250 - 356 | 0.73$ | 0.73$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.89$ | 0.89$ |
5 - 9 | 0.84$ | 0.84$ |
10 - 24 | 0.80$ | 0.80$ |
25 - 49 | 0.75$ | 0.75$ |
50 - 99 | 0.74$ | 0.74$ |
100 - 249 | 0.75$ | 0.75$ |
250 - 356 | 0.73$ | 0.73$ |
IRF710PBF. Housing: TO-220AB. Number of terminals: 3. Manufacturer's marking: IRF710PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.6 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 170pF. Maximum dissipation Ptot [W]: 36W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 2A. On-resistance Rds On: 3.6 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 400V. Quantity in stock updated on 12/01/2025, 13:25.
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