IRF730

Quantity	excl. VAT	VAT incl.
1 - 4	1.27$	1.27$
5 - 9	1.21$	1.21$
10 - 24	1.15$	1.15$
25 - 49	1.08$	1.08$
50 - 99	1.06$	1.06$
100 - 142	0.96$	0.96$

Quantity	U.P
1 - 4	1.27$	1.27$
5 - 9	1.21$	1.21$
10 - 24	1.15$	1.15$
25 - 49	1.08$	1.08$
50 - 99	1.06$	1.06$
100 - 142	0.96$	0.96$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 142

Set of 1

IRF730. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!