Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.42$ | 1.42$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 24 | 1.28$ | 1.28$ |
25 - 49 | 1.21$ | 1.21$ |
50 - 99 | 1.18$ | 1.18$ |
100 - 249 | 1.04$ | 1.04$ |
250 - 301 | 0.99$ | 0.99$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.42$ | 1.42$ |
5 - 9 | 1.35$ | 1.35$ |
10 - 24 | 1.28$ | 1.28$ |
25 - 49 | 1.21$ | 1.21$ |
50 - 99 | 1.18$ | 1.18$ |
100 - 249 | 1.04$ | 1.04$ |
250 - 301 | 0.99$ | 0.99$ |
IRF640N. C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.
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