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Electronic components and equipment, for businesses and individuals

IRF640N

IRF640N
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.42$ 1.42$
5 - 9 1.35$ 1.35$
10 - 24 1.28$ 1.28$
25 - 49 1.21$ 1.21$
50 - 99 1.18$ 1.18$
100 - 249 1.04$ 1.04$
250 - 301 0.99$ 0.99$
Quantity U.P
1 - 4 1.42$ 1.42$
5 - 9 1.35$ 1.35$
10 - 24 1.28$ 1.28$
25 - 49 1.21$ 1.21$
50 - 99 1.18$ 1.18$
100 - 249 1.04$ 1.04$
250 - 301 0.99$ 0.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 301
Set of 1

IRF640N. C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.

Equivalent products :

Quantity in stock : 120
IRF640

IRF640

C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
IRF640
C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
IRF640
C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$

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IRF9640

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IRF640N

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IRLR024N

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IRF730

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IRF740

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IRF630

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IRLR2905

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HD614042FH24

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IRF540

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C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type o...
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