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IRF710

IRF710
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.15$ 1.15$
5 - 9 1.09$ 1.09$
10 - 24 1.03$ 1.03$
25 - 49 0.97$ 0.97$
50 - 55 0.95$ 0.95$
Quantity U.P
1 - 4 1.15$ 1.15$
5 - 9 1.09$ 1.09$
10 - 24 1.03$ 1.03$
25 - 49 0.97$ 0.97$
50 - 55 0.95$ 0.95$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 55
Set of 1

IRF710. C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 6A. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 3.6 Ohms. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

Equivalent products :

Quantity in stock : 142
IRF730

IRF730

C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
IRF730
C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF730
C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.27$ VAT incl.
(1.27$ excl. VAT)
1.27$

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