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Semiconductors Transistors

IRF640

IRF640
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.42$ 1.42$
25 - 49 1.34$ 1.34$
50 - 99 1.31$ 1.31$
100 - 120 1.16$ 1.16$
Quantity U.P
1 - 4 1.58$ 1.58$
5 - 9 1.50$ 1.50$
10 - 24 1.42$ 1.42$
25 - 49 1.34$ 1.34$
50 - 99 1.31$ 1.31$
100 - 120 1.16$ 1.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 120
Set of 1

IRF640. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 301
IRF640N

IRF640N

C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. ...
IRF640N
C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF640N
C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.42$ VAT incl.
(1.42$ excl. VAT)
1.42$

We also recommend :

Quantity in stock : 150
IRF9640

IRF9640

C(in): 1200pF. Cost): 370pF. Channel type: P. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. ...
IRF9640
[LONGDESCRIPTION]
IRF9640
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1.79$ VAT incl.
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Quantity in stock : 120
IRF640

IRF640

C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : ...
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TIP122

TIP122

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
TIP122
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Quantity in stock : 231
IRF9540N

IRF9540N

C(in): 1300pF. Cost): 400pF. Channel type: P. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. ...
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Quantity in stock : 47909
1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
1N4148
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Quantity in stock : 4056
BZX79C12

BZX79C12

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
BZX79C12
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0.0591$ VAT incl.
(0.0591$ excl. VAT)
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Quantity in stock : 63
IR2153

IR2153

Note: Voffset 600V, Vclamp 15.6V. Number of terminals: 8. RoHS: yes. Assembly/installation: PCB thro...
IR2153
[LONGDESCRIPTION]
IR2153
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4.17$ VAT incl.
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4.17$
Quantity in stock : 3880
BZV85C15

BZV85C15

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
BZV85C15
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0.13$ VAT incl.
(0.13$ excl. VAT)
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Quantity in stock : 110
CCAP10UF100V

CCAP10UF100V

Capacitance: 10uF. Diameter: 8mm. Lifespan: 1000 heures. Lenght: 11mm. Configuration: vertical mount...
CCAP10UF100V
[LONGDESCRIPTION]
CCAP10UF100V
[LONGDESCRIPTION]
[MODCATID]
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0.32$ VAT incl.
(0.32$ excl. VAT)
0.32$
Quantity in stock : 178
IRLR024N

IRLR024N

C(in): 480pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of ...
IRLR024N
[LONGDESCRIPTION]
IRLR024N
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