Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.23$ | 2.23$ |
5 - 9 | 2.12$ | 2.12$ |
10 - 24 | 2.05$ | 2.05$ |
25 - 49 | 2.01$ | 2.01$ |
50 - 99 | 1.83$ | 1.83$ |
100 - 249 | 1.77$ | 1.77$ |
250 - 448 | 1.70$ | 1.70$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.23$ | 2.23$ |
5 - 9 | 2.12$ | 2.12$ |
10 - 24 | 2.05$ | 2.05$ |
25 - 49 | 2.01$ | 2.01$ |
50 - 99 | 1.83$ | 1.83$ |
100 - 249 | 1.77$ | 1.77$ |
250 - 448 | 1.70$ | 1.70$ |
N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V - IRF3205. N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3247pF. Cost): 781pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. G-S Protection: no. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 06/06/2025, 07:25.
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