Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.78$ | 2.78$ |
5 - 9 | 2.64$ | 2.64$ |
10 - 24 | 2.50$ | 2.50$ |
25 - 49 | 2.36$ | 2.36$ |
50 - 70 | 2.30$ | 2.30$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.78$ | 2.78$ |
5 - 9 | 2.64$ | 2.64$ |
10 - 24 | 2.50$ | 2.50$ |
25 - 49 | 2.36$ | 2.36$ |
50 - 70 | 2.30$ | 2.30$ |
IRF1405ZPBF. C(in): 4780pF. Cost): 770pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 600A. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.0037 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Rds-on 0.0037 Ohms max. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 10:25.
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