Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.89$ | 1.89$ |
5 - 9 | 1.80$ | 1.80$ |
10 - 24 | 1.70$ | 1.70$ |
25 - 49 | 1.61$ | 1.61$ |
50 - 85 | 1.57$ | 1.57$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.89$ | 1.89$ |
5 - 9 | 1.80$ | 1.80$ |
10 - 24 | 1.70$ | 1.70$ |
25 - 49 | 1.61$ | 1.61$ |
50 - 85 | 1.57$ | 1.57$ |
IRF3315. C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 174 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 108A. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 12/01/2025, 10:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.