Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.22$ | 2.22$ |
5 - 9 | 2.11$ | 2.11$ |
10 - 24 | 2.00$ | 2.00$ |
25 - 49 | 1.89$ | 1.89$ |
50 - 99 | 1.84$ | 1.84$ |
100 - 173 | 1.68$ | 1.68$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.22$ | 2.22$ |
5 - 9 | 2.11$ | 2.11$ |
10 - 24 | 2.00$ | 2.00$ |
25 - 49 | 1.89$ | 1.89$ |
50 - 99 | 1.84$ | 1.84$ |
100 - 173 | 1.68$ | 1.68$ |
IRF3710. C(in): 3230pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 28A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 23m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.
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