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Electronic components and equipment, for businesses and individuals

IRF3710

IRF3710
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.22$ 2.22$
5 - 9 2.11$ 2.11$
10 - 24 2.00$ 2.00$
25 - 49 1.89$ 1.89$
50 - 99 1.84$ 1.84$
100 - 173 1.68$ 1.68$
Quantity U.P
1 - 4 2.22$ 2.22$
5 - 9 2.11$ 2.11$
10 - 24 2.00$ 2.00$
25 - 49 1.89$ 1.89$
50 - 99 1.84$ 1.84$
100 - 173 1.68$ 1.68$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 173
Set of 1

IRF3710. C(in): 3230pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 180A. ID (T=100°C): 28A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 23m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.

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