Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.22$ | 2.22$ |
5 - 9 | 2.10$ | 2.10$ |
10 - 24 | 1.99$ | 1.99$ |
25 - 49 | 1.88$ | 1.88$ |
50 - 99 | 1.84$ | 1.84$ |
100 - 121 | 1.66$ | 1.66$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.22$ | 2.22$ |
5 - 9 | 2.10$ | 2.10$ |
10 - 24 | 1.99$ | 1.99$ |
25 - 49 | 1.88$ | 1.88$ |
50 - 99 | 1.84$ | 1.84$ |
100 - 121 | 1.66$ | 1.66$ |
IRF3205S. C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250nA. IDss (min): 25nA. Equivalents: IRF3205SPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 04:25.
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