Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.48$ | 1.48$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.33$ | 1.33$ |
25 - 49 | 1.25$ | 1.25$ |
50 - 99 | 1.23$ | 1.23$ |
100 - 139 | 1.20$ | 1.20$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.48$ | 1.48$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.33$ | 1.33$ |
25 - 49 | 1.25$ | 1.25$ |
50 - 99 | 1.23$ | 1.23$ |
100 - 139 | 1.20$ | 1.20$ |
FDS4435BZ. C(in): 1385pF. Cost): 275pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. Id(imp): 50A. ID (T=25°C): 8.8A. Idss (max): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Technology: P-channel. Spec info: HBM ESD protection level of 3.8kV. Drain-source protection : no. G-S Protection: yes. Quantity in stock updated on 11/01/2025, 18:25.
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