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FDS4435BZ

FDS4435BZ
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[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.48$ 1.48$
5 - 9 1.40$ 1.40$
10 - 24 1.33$ 1.33$
25 - 49 1.25$ 1.25$
50 - 99 1.23$ 1.23$
100 - 139 1.20$ 1.20$
Quantity U.P
1 - 4 1.48$ 1.48$
5 - 9 1.40$ 1.40$
10 - 24 1.33$ 1.33$
25 - 49 1.25$ 1.25$
50 - 99 1.23$ 1.23$
100 - 139 1.20$ 1.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 139
Set of 1

FDS4435BZ. C(in): 1385pF. Cost): 275pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. Id(imp): 50A. ID (T=25°C): 8.8A. Idss (max): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Technology: P-channel. Spec info: HBM ESD protection level of 3.8kV. Drain-source protection : no. G-S Protection: yes. Quantity in stock updated on 11/01/2025, 18:25.

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