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FDS6675BZ

FDS6675BZ
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.31$ 1.31$
5 - 9 1.25$ 1.25$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 99 1.09$ 1.09$
100 - 249 1.13$ 1.13$
250 - 1283 1.04$ 1.04$
Quantity U.P
1 - 4 1.31$ 1.31$
5 - 9 1.25$ 1.25$
10 - 24 1.18$ 1.18$
25 - 49 1.11$ 1.11$
50 - 99 1.09$ 1.09$
100 - 249 1.13$ 1.13$
250 - 1283 1.04$ 1.04$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1283
Set of 1

FDS6675BZ. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2470pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1. Manufacturer's marking: Extended VGS range (-25V) for battery operated applications. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 3 ns. Technology: PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: FDS6675BZ. Quantity in stock updated on 11/01/2025, 18:25.

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