FDS6679AZ

FDS6679AZ. C(in): 2890pF. Cost): 500pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 65A. ID (T=100°C): n/a. ID (T=25°C): 13A. Idss (max): 1uA. IDss (min): n/a. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 7.7m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 210 ns. Td(on): 13 ns. Technology: PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: Zero Gate Voltage Drain Current. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 05/04/2025, 20:25.