FDN358P

Quantity	excl. VAT	VAT incl.
1 - 4	0.66$	0.66$
5 - 9	0.63$	0.63$
10 - 24	0.60$	0.60$
25 - 49	0.56$	0.56$
50 - 99	0.55$	0.55$
100 - 249	0.57$	0.57$
250 - 1106	0.52$	0.52$

Quantity	U.P
1 - 4	0.66$	0.66$
5 - 9	0.63$	0.63$
10 - 24	0.60$	0.60$
25 - 49	0.56$	0.56$
50 - 99	0.55$	0.55$
100 - 249	0.57$	0.57$
250 - 1106	0.52$	0.52$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1106

Set of 1

FDN358P. C(in): 182pF. Cost): 56pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Function: Single P-Channel, Logic Level. Id(imp): 5A. ID (T=25°C): 1.5A. Idss: 10uA. IDss (min): 1uA. Marking on the case: 358. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.105 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 18:25.

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Delivery in 2-3 days, with postal tracking!