N-channel transistor, 10.8A, 18A, 10uA, 0.22 Ohms, TO-220, TO-220AB, 500V - FDP18N50

N-channel transistor, 10.8A, 18A, 10uA, 0.22 Ohms, TO-220, TO-220AB, 500V - FDP18N50. N-channel transistor, 10.8A, 18A, 10uA, 0.22 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 10.8A. ID (T=25°C): 18A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2200pF. Cost): 330pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 72A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 55 ns. Technology: N-Channel MOSFET (UniFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Faible charge de grille (45nC typique). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 16/04/2025, 02:25.