FDP18N50

Quantity	excl. VAT	VAT incl.
1 - 1	5.74$	5.74$
2 - 2	5.45$	5.45$
3 - 4	5.16$	5.16$
5 - 9	4.87$	4.87$
10 - 19	4.76$	4.76$
20 - 25	4.65$	4.65$

Quantity	U.P
1 - 1	5.74$	5.74$
2 - 2	5.45$	5.45$
3 - 4	5.16$	5.16$
5 - 9	4.87$	4.87$
10 - 19	4.76$	4.76$
20 - 25	4.65$	4.65$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 25

Set of 1

FDP18N50. C(in): 2200pF. Cost): 330pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 72A. ID (T=100°C): 10.8A. ID (T=25°C): 18A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. On-resistance Rds On: 0.22 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 55 ns. Technology: N-Channel MOSFET (UniFET). Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Faible charge de grille (45nC typique). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!